AO6401A 30v p-channel mosfet v ds i d (at v gs =-10v) -5a r ds(on) (at v gs =-10v) < 47m w r ds(on) (at v gs =-4.5v) < 64m w r ds(on) (at v gs =-2.5v) < 85m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 37 110 50 t a =25c t a =70c pulsed drain current c continuous drain current drain-source voltage -30 the AO6401A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is s uitable for use as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v maximum junction-to-ambient a units v 12 gate-source voltage a i d -5 -4 -28 c/w r q ja 47.5 74 62.5 junction and storage temperature range parameter typ max -55 to 150 c thermal characteristics power dissipation b p d t a =25c w 2 1.3 t a =70c g d s d d g d s d top view 1 2 3 4 5 6 general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.5 -0.9 -1.3 v i d(on) -28 a 39 47 t j =125c 60 74 45 64 m w 59 85 m w g fs 18 s v sd -0.7 -1 v i s -2.5 a c iss 645 780 pf c oss 80 pf c rss 55 80 pf r g 4 7.8 12 w q g (10v) 14 17 nc q g (4.5v) 7 8.5 nc q gs 1.5 nc q gd 2.5 nc t d(on) 6.5 ns t r 3.5 ns t d(off) 41 ns t f 9 ns t rr 11 13.5 ns q rr 3.5 nc diode forward voltage i s =-1a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance i f =-5a, di/dt=100a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters body diode reverse recovery time v ds =-5v, i d =-5a on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-5a drain-source breakdown voltage v gs =-2.5v, i d =-1a v gs =-4.5v, i d =-4a forward transconductance r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current m w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-5a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =-5a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedance from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. AO6401A 30v p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 20 40 60 80 100 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-2.5v i d =-1a v gs =-10v i d =-5a v gs =-4.5v i d =-4a 30 50 70 90 110 130 150 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-2.0v -2.5v -10v -4.5v -7v v gs =-2.5v AO6401A 30v p-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 0 5 10 15 20 25 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =110c/w t on t p d AO6401A 30v p-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AO6401A 30v p-channel mosfet www.freescale.net.cn 5 / 5
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